A process of trilayer deposition to obtain small Nb/Al-AlO x /Nb junctions (1 mu m 2 ) with excellent I-V characteristics, good reliability and high current densities is described. To optimize this process, it has been useful to carry out several studies. The authors found that it was necessary to heat sink the quartz substrate during all trilayer fabrication steps. Anodization spectroscopy and RIE etching have been used to verify the quality of the tunnel barrier which is directly correlated with the I-V characteristics. An oxygen plasma is used to reduce the resist diameter and thus to expose the junction perimeter to the SiO layer, so as to obtain small junction areas with small leakage currents. The first results obtained with these junctions integrated in a 380 GHz receiver are promising: the DSB receiver noise temperature is 310 K at 374 GHz with a mixer noise temperature of about 155 K.
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Feautrier et al. (1992) studied this question.
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