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Niobium-stress influence on Nb/Al-oxide/Nb trilayer Josephson-junction characteristics is studied. Different junction fabrication techniques are examined such as conventional etching and new lift-off processes. Nb-film stress, relaxed during trilayer etching, can deteriorate junction quality in etching-processed junctions smaller than a few micrometers square. Such deterioration does not occur in lift-off processed junctions even when they are 1 μm square because stress relaxation occurs during trilayer deposition through lift-off stencils. This new all-Nb Josephson-junction fabrication technique produces high-quality junctions with Rsg/Rnn =24 (Rsg and Rnn are tunnel resistances at 2 and 4 mV, respectively) and a current uniformity of 1.5% for 100 1-μm-square junctions connected in series.
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Kuroda et al. (1988) studied this question.
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