A mechanism is proposed for the formation of metastable defects in hydrogenated amorphous silicon that is driven by the presence of mobile carriers, instead of by their recombination as has been thought. This carrier-induced mechanism explains several observations that could not be reconciled with recombination-driven mechanisms, including defect formation in accumulation layers and light-induced recovery of defects. A configuration coordinate diagram and rate equation are proposed.
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Redfield et al. (1996) studied this question.
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