Hydrogenated amorphous silicon films are rapidly degraded by irradiation with vacuum-ultraviolet light from a synchrotron. The main light-induced defects are silicon dangling bonds as deduced from measurements of electron spin resonance. Defect creation is due to bond breaking of silicon-silicon bonds by excited electrons having a high energy. The value of the required activation energy (about 1 eV) has been obtained by studying the process of defect decay during thermal annealing.
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Saito et al. (1992) studied this question.
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