Picosecond Photoinduced Transmission Associated with Deep Traps in Phosphorus-Dopeda-Si: H

This is the authors' abstract. We don't add key points for this paper.

Photoinduced transmission was observed in the picosecond time domain in phosphorus-doped a-Si: H and connected with deep hole traps produced by doping. The hole transport was found to be dispersive starting before 5 ps and temperature dependent. This shows that the energy distribution of shallow traps is exponential beginning below 10^-2 eV from the valence-band top. The deep traps are negatively charged defects, the trapped holes are removed from the recombination process, and their distribution peaks at 0.45 eV above the valence-band top.