Low-Frequency Noise in Vertical InAs Nanowire FETs

This letter presents dc characteristics and low-frequency noise (LFN) measurements on single vertical InAs nanowire MOSFETs with 35-nm gate length andHfO₂high-κdielectric. The average normalized transconductance for three devices is 0.16 S/mm, with a subthreshold slope of 130 mV/decade. At 10 Hz, the normalized noise powerSI/Id²measures7.3 × 10⁻⁷\ Hz⁻¹. Moreover, the material-dependent Hooge's parameter at room temperature is estimated to be4.2 × 10⁻³.