Two passivation treatments of InP surface are presented: (i) thermal treatment under an arsenic partial pressure by molecular-beam epitaxy technique, and (ii) a new As-based aqueous chemical treatment. Both result in similarly improved electronic and physicochemical properties of the InP surface. The fast interface state density is reduced, the drift phenomena are practically suppressed and the thermal stability is greatly enhanced.
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Chave et al. (1987) studied this question.
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