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August 1, 1980Applied Physics Letters

Arsenic stabilization of InP substrates for growth of GaxIn1−xAs layers by molecular beam epitaxy

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Authors

GDGraham J. DaviesRutgers, The State University of New JerseyRHR. HeckingbottomBT Group (United Kingdom)HOHideo OhnoTohoku Institute of Technology

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Davies et al. (1980) studied this question.

synapsesocial.com/papers/6a6fbd6f6ceb2bbd16dfb960https://doi.org/10.1063/1.91910
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Properties of Molecular Beam Epitaxial InxGa1-xAs (x≈0.53) Layers Grown on InP Substrates1979 · 20 citations
  2. 2Stabilization of surfaces of III-V compound crystals by molecular beams1975 · 30 citations
  3. 3Composition control of GaxIn1−xAs films grown by MBE onto InP substrates1980 · 3 citations
  4. 4The evaporation of InP under Knudsen (equilibrium) and Langmuir (free) evaporation conditions1974 · 163 citations
  5. 5GaAs, GaP, and GaAsxP1−x Epitaxial Films Grown by Molecular Beam Deposition1969 · 163 citations