Thin multilayer aluminum structures for superconducting devices

Various aluminum-based thin-film structures were manufactured and investigated at temperatures of 50 mK–3 K. Multilayer films of Al and Si, Al and Cr, and Al in the presence of oxygen were deposited by the thermal evaporation technique. As the thickness of pure-Al films decreases from 20 to 3 nm, the temperature of the superconducting transition increases from 1.30 to 2.45 K. An increase in the oxygen pressure to 5 × 10 −6 mbar during deposition of Al films results in an increase in the critical temperature to 2.4 K. The presence of a chromium sublayer with a thickness of <0.5 nm may lead to complete suppression of superconductivity, whereas a thicker layer, 1–4 nm, deposited at a higher temperature with preliminary sputtering reduces the critical current of Al/Cr two-layer films to a lower degree. An atomic-force microscope was used to study the surface morphology and granularity and the roughness of manufactured film structures. The smallest linear roughness having a size of 0.29 nm for a 3-nm-thick film shows the advantage of using thinner films for creating a homogeneous tunneling barrier.