A monolithic microwave integrated circuit power amplifier consisting of one 8×100 µm AlGaN/GaN transistor has been realised. At 10 GHz the coplanar amplifier delivers 35.7 dBm continuous-wave (CW) output power corresponding to a power density of 4.6 W/mm with 26% maximum power added efficiency (PAE) at the bias point VDS=40 V. Reducing the bias to VDS=25 V results in 34.2 dBm maximum CW output power with 32% PAE at 10 GHz.
No takes yet. Share an insight, caveat, or question.
Behtash et al. (2004) studied this question.
Synapse has enriched 3 closely related papers on similar clinical questions. Consider them for comparative context: