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June 1, 2002Proceedings of the IEEE

Trapping effects in GaN and SiC microwave FETs

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Authors

SBS.C. BinariUnited States Naval Research LaboratoryPKP. B. KleinUnited States Naval Research LaboratoryTKT.E. KaziorDefense Advanced Research Projects Agency

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Binari et al. (2002) studied this question.

synapsesocial.com/papers/6a879d4d3846ae36bd3e908ehttps://doi.org/10.1109/jproc.2002.1021569
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