What question did this study set out to answer?

Investigate direct-current, small-signal, and microwave power characteristics in AlGaN/GaN high-electron-mobility transistors while analyzing the influence of charge trapping mechanisms.

March 1, 2001IEEE Transactions on Electron DevicesOpen Access

Trapping effects and microwave power performance in AlGaN/GaN HEMTs

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Authors

SBS.C. Binari KIK. Ikossi JRJ.A. Roussos

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Overview

Experimental evaluation demonstrates enhanced microwave power performance in AlGaN/GaN transistors, indicating that mitigating surface and buffer trapping reduces current collapse.

Key Points

Investigate direct-current, small-signal, and microwave power characteristics in AlGaN/GaN high-electron-mobility transistors while analyzing the influence of charge trapping mechanisms.
Fabricated AlGaN/GaN high-electron-mobility transistors with a 0.4 µm gate length.
Measured direct-current parameters, cutoff frequencies, and microwave power outputs at 3.8 GHz under continuous-wave and pulsed modes.
Correlated gate lag and drain current collapse phenomena with surface states and GaN buffer layer properties.
Devices achieved a maximum drain current exceeding 1 A/mm, a gate-drain breakdown voltage over 80 V, an f_T of 30 GHz, and an f_max of 70 GHz.
Identified that surface trapping governs gate lag, whereas GaN buffer layer defects cause drain current collapse.
Mitigating trapping effects produced a continuous-wave power density of 3.3 W/mm and a pulsed power density of 6.7 W/mm at 3.8 GHz.

Cite This Study

Binari et al. (2001) studied this question.

synapsesocial.com/papers/6a87f199d03e68c3c9a52ea1 https://doi.org/10.1109/16.906437

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March 1, 2001IEEE Transactions on Electron DevicesOpen Access

Trapping effects and microwave power performance in AlGaN/GaN HEMTs

View Full Paper

Ask AI

Bookmark

Authors

SBS.C. Binari KIK. Ikossi JRJ.A. Roussos

Discussion

Member takes

Overview

Experimental evaluation demonstrates enhanced microwave power performance in AlGaN/GaN transistors, indicating that mitigating surface and buffer trapping reduces current collapse.

Key Points

Investigate direct-current, small-signal, and microwave power characteristics in AlGaN/GaN high-electron-mobility transistors while analyzing the influence of charge trapping mechanisms.
Fabricated AlGaN/GaN high-electron-mobility transistors with a 0.4 µm gate length.
Measured direct-current parameters, cutoff frequencies, and microwave power outputs at 3.8 GHz under continuous-wave and pulsed modes.
Correlated gate lag and drain current collapse phenomena with surface states and GaN buffer layer properties.
Devices achieved a maximum drain current exceeding 1 A/mm, a gate-drain breakdown voltage over 80 V, an f_T of 30 GHz, and an f_max of 70 GHz.
Identified that surface trapping governs gate lag, whereas GaN buffer layer defects cause drain current collapse.
Mitigating trapping effects produced a continuous-wave power density of 3.3 W/mm and a pulsed power density of 6.7 W/mm at 3.8 GHz.

Cite This Study

Binari et al. (2001) studied this question.

synapsesocial.com/papers/6a87f199d03e68c3c9a52ea1 https://doi.org/10.1109/16.906437

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