Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
August 5, 1999Electronics Letters

Drain current compression in GaN MODFETs underlarge-signalmodulation at microwave frequencies

View Full Paper
Ask AI
Bookmark
Share

Authors

CNC. NguyenNNNam NguyenDGD.E. Grider

Discussion

Loading...

Member takes

Overview

Key Points

Key points are not available for this paper at this time.

Cite This Study

Nguyen et al. (1999) studied this question.

synapsesocial.com/papers/6a86caa9efff3bac58ca01fahttps://doi.org/10.1049/el:19990957
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1High performance GaN/AlGaN MODFETsgrown by RF-assisted MBE1998 · 33 citations
  2. 2GaN/AlGaN MODFET with 80 GHz f max and >100 V gate-drain breakdown voltage1997 · 35 citations
  3. 3Microwave performance of AlGaN/GaN inverted MODFET's1997 · 105 citations
  4. 4Short-channel Al 0.5 Ga 0.5 N/GaNMODFETs withpower density > 3 W/mm at 18 GHz1997 · 82 citations
  5. 5High Al-content AlGaN/GaN MODFETs for ultrahigh performance1998 · 280 citations