GaN/AlGaN MODFET with 80 GHz f max and >100 V gate-drain breakdown voltage

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Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context:

1. 1Two-dimensional electron gas in GaN–AlGaN heterostructures deposited using trimethylamine-alane as the aluminum source in low pressure metalorganic chemical vapor deposition1995 · 83 citations
2. 2Short-channel GaN/AlGaN doped channel heterostructurefieldeffect transistors with 36.1 cutoff frequency1996 · 122 citations
3. 3Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors1996 · 354 citations
4. 4Wide bandgap semiconductor materials and devices1996 · 277 citations