Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
February 5, 1998Electronics Letters

High performance GaN/AlGaN MODFETsgrown by RF-assisted MBE

View Full Paper
Ask AI
Bookmark
Share

Authors

CNC. NguyenNNNam NguyenMLMinh T. N. Le

Discussion

Loading...

Member takes

Overview

Key Points

Key points are not available for this paper at this time.

Cite This Study

Nguyen et al. (1998) studied this question.

synapsesocial.com/papers/6a86caa9efff3bac58ca01fchttps://doi.org/10.1049/el:19980198
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1AlGaN/GaN double heterostructure channel modulationdoped field effect transistors (MODFETs)1997 · 58 citations
  2. 2AlGaN/GaN HEMTs grown on SiC substrates1997 · 162 citations
  3. 3Short channel AlGaN/GaN MODFET's with 50-GHz f/sub T/ and 1.7-W/mm output-power at 10 GHz1997 · 97 citations
  4. 4Short-channel Al <sub>0.5</sub> Ga <sub>0.5</sub> N/GaNMODFETs withpower density &gt; 3 W/mm at 18 GHz1997 · 82 citations
  5. 5GaN/AlGaN MODFET with 80 GHz <i> f <sub>max</sub> </i> and &gt;100 V gate-drain breakdown voltage1997 · 35 citations