Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
January 30, 1997Electronics Letters

AlGaN/GaN HEMTs grown on SiC substrates

View Full Paper
Ask AI
Bookmark
Share

Authors

SBS.C. BinariJRJoan M. RedwingGKG. Kelner

Discussion

Loading...

Member takes

Overview

Key Points

Key points are not available for this paper at this time.

Cite This Study

Binari et al. (1997) studied this question.

synapsesocial.com/papers/6a8fdcd92a6a02e8211cb161https://doi.org/10.1049/el:19970122
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1High transconductance-normally-off GaN MODFETs1995 · 141 citations
  2. 275 Å GaN channel modulation doped field effect transistors1996 · 69 citations
  3. 3Metal semiconductor field effect transistor based on single crystal GaN1993 · 365 citations
  4. 4Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors1996 · 354 citations
  5. 5Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors1996 · 180 citations