Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
September 1, 1995Journal of Applied Physics

H, He, and N implant isolation of n-type GaN

View Full Paper
Ask AI
Bookmark
Share

Authors

SBS.C. BinariUnited States Naval Research LaboratoryHDH.B. DietrichUnited States Naval Research LaboratoryGKG. KelnerUnited States Naval Research Laboratory

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Binari et al. (1995) studied this question.

synapsesocial.com/papers/6a93ba7e736f279a1f7c142ahttps://doi.org/10.1063/1.360712
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1The nature of donor conduction in n-GaN1993 · 25 citations
  2. 2Implant-induced high-resistivity regions in InP and InGaAs1989 · 99 citations
  3. 3Metal semiconductor field effect transistor based on single crystal GaN1993 · 366 citations
  4. 4Microwave performance of GaN MESFETs1994 · 153 citations
  5. 5Growth of high optical and electrical quality GaN layers using low-pressure metalorganic chemical vapor deposition1991 · 174 citations