Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
February 1, 2000Journal of Applied Physics

Creation of high resistivity GaN by implantation of Ti, O, Fe, or Cr

View Full Paper
Ask AI
Bookmark
Share

Authors

XCX. A. CaoZaozhuang University
S. J. Pearton
S. J. PeartonUniversity of StuttgartGDG. DangDEVCOM Army Research Laboratory

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Cao et al. (2000) studied this question.

synapsesocial.com/papers/6a90371e6bfd95d7bd4dd000https://doi.org/10.1063/1.371984
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Ion implantation doping and isolation of GaN1995 · 306 citations
  2. 2H, He, and N implant isolation of n-type GaN1995 · 144 citations
  3. 3Thermal Annealing of Proton‐Bombarded GaAs and ( Al , Ga ) As1984 · 13 citations
  4. 4Simple Band Model for Amorphous Semiconducting Alloys1969 · 1,042 citations