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April 29, 2005Applied Physics Letters

Activation characteristics of ion-implanted Si+ in AlGaN

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Authors

YIYoshihiro IrokawaNational Institute for Materials ScienceOFOsamu FujishimaTokyo Institute of TechnologyTKTetsu KachiNagoya University

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Irokawa et al. (2005) studied this question.

synapsesocial.com/papers/6a978c2004c78a31a48be011https://doi.org/10.1063/1.1926422
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