Experimental study demonstrates high dopant activation and low contact resistance in silicon-implanted AlGaAs/GaAs structures, highlighting optimized conditions for high-frequency transistors.
The behavior of Si+-ion-implanted Al0.3Ga0.7As/GaAs MODFET structures annealed in an As2 environment created by the decomposition of InAs has been studied. Contact studies were made using AuGeNiAg alloyed contacts. The best activation of Si+ ions of around 40% is achieved for a peak Si concentration of ∼2 × 1018 Si ions/cm3 situated close to the AlGaAs/GaAs interface for annealing temperatures above 900°C. The optimum implantation parameters for a MODFET structure having an AlGaAs layer of thickness ∼500–600 Åare: 80 keV 5 × 1013Si+ions/cm2 with 915°C 15 min annealing, yielding sheet resistances ⩽ 200 ohms/□, corresponding to an activation of ∼30% and a peak Si ion concentration of about 5 × 1018 cm−3. A record specific transfer resistance of ∼0.05 ± 0.03 ohm · mm was achieved for transient alloying of a Ni/AuGe/Ag/Au metallization with a rise time ∼100 sec to a maximum temperature of ∼600°C.
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Mukherjee et al. (1986) studied this question.
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