Wide-range characterization of GaN HEMTs and its associated compact modeling procedure

This paper details a method for the characterization and modeling of GaN HEMT transistors on silicon substrate, with a focus on providing a reproducible workflow, step-by-step characterization procedure, identification scripts for the model parameters and sample data. Static ( I d ( V g s ) , I d ( V d s ) ) and dynamic ( C ( V d s ) ) measurements are conducted to identify key device parameters across a wide current range, from nanoamperes to several amperes. Based on these measurements, a modeling approach inspired by existing literature is implemented using Matlab, enabling the generation of a robust LTspice compatible models. The constructed models are validated through double-pulse tests on two distinct GaN devices, demonstrating good agreement between simulation and experimental results. This work offers a turnkey solution for researchers and engineers seeking GaN HEMT’s models efficiently.