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February 5, 2026Solid-State Electronics

A probabilistic compact model of ReRAM memories for accurate and high-performance simulation

Silvana Guitarra Martín Gavilánez J. Cevallos Andrés Vélez

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Key Points

Enhanced performance metrics for ReRAM output in simulations indicate higher accuracy levels.
The compact model showed a 30% increase in simulation efficiency compared to traditional methods.
Probabilistic modeling techniques were employed to assess memory behavior under varying conditions.
Findings imply that adopting this model could streamline the ReRAM design workflow significantly.

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Implication

Analysis demonstrates improved performance in ReRAM memory simulation, suggesting better efficiencies in design processes.

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Cite This Study

Guitarra et al. (2026) studied this question.

synapsesocial.com/papers/69a7679fbadf0bb9e87e1b17 https://doi.org/10.1016/j.sse.2026.109349

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Keep reading

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

1Memristive technologies for data storage, computation, encryption, and radio-frequency communicationOriginal Research · 2022 · 711 citations
2Multi-Level Control of Resistive RAM (RRAM) Using a Write Termination to Achieve 4 Bits/Cell in High Resistance StateOriginal Research · 2021 · 18 citations
3Physics-based modeling approaches of resistive switching devices for memory and in-memory computing applicationsOriginal Research · 2017 · 79 citations
4A SPICE Compact Model of Metal Oxide Resistive Switching Memory With VariationsOriginal Research · 2012 · 282 citations
5Resistance switching memories are memristorsOriginal Research · 2011 · 1,435 citations

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