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A measurement technique is presented which uses narrow, fast-rise-time pulses applied to both the gate and the drain of a GaAs MESFET to obtain the drain characteristics of the device. This allows the characteristics of the device to be obtained which correspond to frequencies above those at which surface and substrate traps can respond. The resulting characteristics show significant departures from those obtained using conventional long pulse and DC measurement techniques.
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Barton et al. (1987) studied this question.
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