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March 1, 1996Journal of Applied Physics

Characteristics of light-emitting diodes based on GaN p-n junctions grown by plasma-assisted molecular beam epitaxy

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Authors

RVR. P. VaudoCree (China)IGI. D. GoepfertBoston UniversityTMT. D. MoustakasBoston University

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Vaudo et al. (1996) studied this question.

synapsesocial.com/papers/6a71cff931a3df824329d2cchttps://doi.org/10.1063/1.361109
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