Influence of Impurities on the Performance of Doped-Well GaInAs/InP Resonant Tunneling Diodes

The influence of well impurity doping on the performance of GaInAs/InP resonant tunneling diodes (RTDs) was investigated. For undoped diodes, the peak-to-valley (P/V) current ratio was 9.7, at 2×10 17 cm -3 it was 10.8, and at 2×10 18 cm -3 it was 4.0. The maximum at 2×10 17 cm -3 can be explained by potential bending, and the decrease at 2×10 18 cm -3 can be explained by scattering. A change in the current-voltage characteristics at a doping level of 2×10 18 cm -3 can be explained by potential bending in the well. Moreover, the variation in the observed width of the resonance level can explain the change in P/V ratios.