Electronically controlled metastable defect reaction in InP

We report the observation of a reversible charge-state---dependent defect reaction in 1- MeV-electron---irradiated n-type InP. The reaction, observed by capacitance transient spectroscopy and thermally stimulated capacitance, is characterized by metastable defect configurations at T160 K. The electronic properties of the two configurations, together with the reaction kinetics, provide evidence regarding the nature of the defects involved. The phenomenon can be described by a model involving the interaction of a shallow donor with an intrinsic defect or defect complex. The defect charge state controls an electrostatically driven pairing-dissociation reaction which results in changes in the observed defect electronic properties.