Change of the junction capacitance under the illumination of monochromatic radiation has been observed in GaP n+p junctions. The peaks were observed at 1.8 and 2.4 eV at 77°K. The 1.8 eV peak was attributed to the hole activation from Fe3+ to the valence band. The photoconductivity spectrum and the transient phenomenon of the photoconductivity in p+n junctions and in high-resistivity n-type bulk crystals also showed the presence of the 1.8 eV level due to Fe.
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Okuno et al. (1973) studied this question.
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