Low-temperature annealing of As-implanted Ge

Furnace annealing (FA) and rapid thermal anealing (RTA) of As75-implanted Ge is studied and contrasted. Activation has been observed in furnace-annealed samples at 500 °C. Rapid thermally annealed samples show activation at 575 °C and thereafter. Diffusion effects are significant during FA above 575 °C, while RTA is accompanied with very little dopant diffusion. Damage annealing is best in the FA samples as indicated by the mobility profiles. A dual process such as a 430 °C-FA/650 °C-RTA offers best results for activation, especially in the case of low-dose implants (∼97%). Carrier concentration profiles resemble theoretical implant profiles except near the surface where a region of high concentration is observed.