An extraction method to obtain the induced gate noise (i~/sub g/~/sup 2/~) channel noise (i~/sub d/~/sup 2/~), and their cross correlation (i~/sub g/~i~/sub d/~*~) in submicron MOSFETs directly from scattering and RF noise measurements has been presented and verified by measurements. In addition, the extracted induced gate noise, channel noise, and their correlation in MOSFETs fabricated in 0.18-/spl mu/m CMOS process versus frequencies, bias conditions, and channel lengths are presented and discussed.
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Chen et al. (2001) studied this question.
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