Experimental study demonstrates strong n-type doping in quasi-freestanding monolayer graphene using silicon nitride top gates, indicating electrical access to the charge neutrality point.
We report on top-gated field effect devices built from quasi-freestanding monolayer graphene (QFMLG) on 6H–SiC(0001) in combination with a silicon nitride (SiN) gate dielectric. SiN was grown by plasma enhanced chemical vapour deposition. The composition of the dielectric was investigated by x-ray photoelectron spectroscopy (XPS). Spectroscopic and electrical characterization of the graphene layers were done by XPS, Raman spectroscopy and Hall effect measurements before and after SiN deposition. In contrast to previous reports on SiN/graphene, we observe that our dielectric layer induces strong n-type doping. With such a gate insulator, the neutrality level of the QFMLG could be accessed by an appropriate gate voltage.
No takes yet. Share an insight, caveat, or question.
Wehrfritz et al. (2014) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: