What question did this study set out to answer?

To compare the electrical characteristics and density of states in amorphous silicon thin-film transistors and metal-insulator-semiconductor structures using top-nitride versus bottom-nitride gate insulator configurations.

December 1, 1993Journal of The Electrochemical Society

Electrical Properties of Amorphous Silicon Transistors and MIS‐Devices: Comparative Study of Top Nitride and Bottom Nitride Configurations

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Authors

ARAlain RollandFonctions Optiques pour les Technologies de l’information JRJ. RichardMiQro Innovation Collaborative Centre JKJean‐Paul KleiderCentre National de la Recherche Scientifique

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Implication

Comparative study demonstrates higher field-effect mobility in bottom-nitride amorphous silicon transistors, indicating that contact parasitic resistance limits top-nitride device performance.

Key Points

To compare the electrical characteristics and density of states in amorphous silicon thin-film transistors and metal-insulator-semiconductor structures using top-nitride versus bottom-nitride gate insulator configurations.
Fabricated amorphous silicon thin-film transistors (TFTs) and metal-insulator-semiconductor (MIS) devices with either top-nitride (TN) or bottom-nitride (BN) gate insulators.
Determined density of states (DOS) using TFT subthreshold transfer characteristics and quasistatic capacitance-voltage (C-V) measurements on MIS devices.
Applied a pure phosphine rear surface treatment to TN TFTs to assess and mitigate parasitic resistance effects.
Subthreshold transfer characteristics yielded a density of states 1 to 2 orders of magnitude higher than quasistatic C(V) measurements, with BN devices showing a DOS lower by less than a factor of two compared to TN devices.
Field-effect mobility was approximately 70% higher in BN TFTs than in TN TFTs due to source and drain parasitic resistances.
Treating the rear surface of TN TFTs with pure phosphine alleviated parasitic resistance and yielded performance comparable to BN TFTs.

Cite This Study

Rolland et al. (1993) studied this question.

synapsesocial.com/papers/6a855d65fc70cb81dc202152 https://doi.org/10.1149/1.2221149

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Implication

Comparative study demonstrates higher field-effect mobility in bottom-nitride amorphous silicon transistors, indicating that contact parasitic resistance limits top-nitride device performance.

Electrical Properties of Amorphous Silicon Transistors and MIS‐Devices: Comparative Study of Top Nitride and Bottom Nitride Configurations

Discussion

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Implication

Key Points

Cite This Study

Electrical Properties of Amorphous Silicon Transistors and MIS‐Devices: Comparative Study of Top Nitride and Bottom Nitride Configurations

Discussion

Member takes

Implication

Key Points

Cite This Study

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