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We have generated electromagnetic beams from a variety of semiconductors. When a bare semiconductor wafer was illuminated by femtosecond optical pulses, electromagnetic waves radiate from the surface and form collinear diffraction-limited electromagnetic beams in the inward and outward directions. The amplitude and phase of the radiated field depend on carrier mobility, the strength and polarity of the static internal field at the semiconductor surface.
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Zhang et al. (1990) studied this question.
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