Carrier gas-free chemical vapor deposition technique for in situ preparation of high quality YBa2Cu3O7−δ thin films

A new carrier gas-free metalorganic chemical vapor deposition technique was developed yielding a high deposition rate. The β-dicetonate precursor compounds were synthesized with reproducible water content which is of great importance for their vapor pressure. With the technique described above c-axis oriented YBa2Cu3O7−δ thin films were prepared with Tc(R=0)=91.8 K and jc(77 K)=1.3×106 A/cm2 on (100)SrTiO3 substrates and Tc(R=0)=91.1 K and jc(77 K)=3×105 A/cm2 on (100)MgO substrates at B=0 T. The influence of the metal composition on the formation of precipitation was studied by SEM investigations.