Charge Collection Measurements on GaAs Devices Fabricated on Semi-Insulating Substrates

Results of charge collection measurements on technologically important GaAs devices fabricated on semiinsulating (SI) substrates are described. Data are presented which suggest that charge funneling in SI GaAs is relatively unimportant compared to that which occurs in semiconducting silicon and GaAs. A qualitative comparison is made of charge collection in silicon and SI GaAs devices to examine their relative susceptibility to single-event upset.