The paper describes the theory of a new static lifetime measurement, carried out by means of potential probes in the vicinity of a current-carrying contact on a high-lifetime semiconductor, with and without traps. It is based on recognition of the fact that, in the presence of minority carrier injection, a uniform field is obtained only for a particular current density, and that depends directly on the carrier lifetime.
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Manifacier et al. (1983) studied this question.
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