Fast High-Fidelity Single-Shot Readout of Spins in Silicon Using a Single-Electron Box

This is the authors' abstract. We don't add key points for this paper.

Three key metrics for readout systems in quantum processors are measurement, fidelity and footprint. Fast high-fidelity readout enables mid-circuit, a necessary feature for many dynamic algorithms and quantum error, while a small footprint facilitates the design of scalable,-connected architectures with the associated increase in computing. Here, we present two complementary demonstrations of fast-fidelity single-shot readout of spins in silicon quantum dots using a, dispersive charge sensor: a radio-frequency single-electron box. The, despite requiring fewer electrodes than conventional detectors, at the state-of-the-art achieving spin read-out fidelity of 99.2% in than 6 \μs. We demonstrate that low-loss high-impedance resonators, coupled to the sensing dot, in conjunction with Josephson parametric are instrumental in achieving optimal performance. We quantify benefit of Pauli spin blockade over spin-dependent tunneling to a, as the spin-to-charge conversion mechanism in these readout schemes. results place dispersive charge sensing at the forefront of readout for scalable semiconductor spin-based quantum processors.