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February 1, 1974Journal of Applied Physics

Effects of dislocation density on the properties of liquid phase epitaxial GaAs

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MEM. EttenbergInfrared Laboratories (United States)

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M. Ettenberg (1974) studied this question.

synapsesocial.com/papers/6a720c9553da1ffdb507ccc8https://doi.org/10.1063/1.1663336
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Also Consider

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  1. 1Minority carrier diffusion length and recombination lifetime in GaAs:Ge prepared by liquid-phase epitaxy1973 · 89 citations
  2. 2Lang Topographic Studies of III-V Heteroepitaxial Films Grown on Sapphire and Spinel1972 · 32 citations
  3. 3Etching of Dislocations on the Low-Index Faces of GaAs1965 · 339 citations
  4. 4Mechanism of Electron Capture by a Dislocation1965 · 11 citations