Electroluminescence and photoluminescence of GaAs : Ge prepared by liquid phase epitaxy

Optical data are presented relating the photoluminescence emission of GaAs : Ge epitaxial layers with hole concentrations in the range from 6 × 1016 to 2.7 × 1019 cm−3. These data are supplemented with electroluminescence results obtained using diodes where the p side of the junction consists of GaAs : Ge. Measurements reported include the peak position of the electroluminescence and photoluminescence peaks, half-intensity bandwidths, and radiative efficiency at room temperature.