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March 1, 1969Japanese Journal of Applied Physics

Si- and Ge-Doped GaAs p-n Junctions

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Authors

TMToyosaka MoriizumiTohoku Institute of TechnologyKTKiyoshi TakahashiNational Cancer Center Hospital East

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Moriizumi et al. (1969) studied this question.

synapsesocial.com/papers/6a720c9653da1ffdb507cccfhttps://doi.org/10.1143/jjap.8.348
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Luminescence in Silicon-Doped GaAs Grown by Liquid-Phase Epitaxy1968 · 141 citations
  2. 2Electrical Transport in nGe-pGaAs Heterojunctions†1966 · 244 citations
  3. 3Statistical Mechanics of Dilute Solid Solutions1962 · 18 citations
  4. 4Photoluminescence of Silicon-Compensated Gallium Arsenide1966 · 41 citations
  5. 5Radiative Recombination in Melt-Grown n-Type, Ge-Doped GaAs1967 · 19 citations