A determination of the atomic displacement energy in cubic silicon carbide

The technique of ‘bracketing’ has been used to determine the atomic displacement energy (E d) in cubic silicon carbide. Measurements have been made at temperatures between 140K and 1450K. The effect of variations in the denuded-zone thickness within this temperature range is discussed. It is concluded that for materials with high melting points and large values of Ed the most accurate results are obtained from studies at liquid nitrogen temperatures. The values of the atomic displacement energy determined in this study have been found to be consistent with those obtained from luminescence and electron spin resonance measurements.