The diffusion of germanium in single-crystal silicon has been measured using the radioactive tracer 71Ge and a thin sectioning technique. The activation energy of 4.7 eV determined from the data is analyzed by considering the expected contribution due to the wrong-sized impurity ions. It is concluded that the high activation energy observed is expected from analogy to silicon self-diffusion.
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McVay et al. (1973) studied this question.
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