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March 1, 1994Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

Molecular-beam epitaxy growth of quantum dots from strained coherent uniform islands of InGaAs on GaAs

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Authors

DLD. LeonardUniversitas TrisaktiMKMohan KrishnamurthyMichigan Technological UniversitySFS. FafardCentre National de la Recherche Scientifique

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Cite This Study

Leonard et al. (1994) studied this question.

synapsesocial.com/papers/6a721c84f44fa9f079dfb336https://doi.org/10.1116/1.587088
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