Interpretation and modeling of buried InAs quantum dots on GaAs and InP substrates

Comparisons of buried InAs/GaAs and InAs/InP quantum dots (QDs) utilizing transmission electron microscopy display interesting parallels and differences between the two systems. The higher 7.2% misfit in the InAs/GaAs system produces small (∼20 nm diameter) QDs with a majority displaying a predominately round shape. The lower 3.2% misfit in the InAs/InP system produces larger QDs (∼35 nm diameter) with the majority also displaying a predominately round shape. In both systems, the size of the QDs can be varied by changes in growth procedures and the largest QDs in any population show evidence of faceting