Answers are grounded in this paper and cite their sources.
The evolution of low-dimensional microstructures in the growth of strained GaInAs/AlInAs and GaInAs/InP heterostructures on planar InP (311)B and (311)A substrates by metalorganic vapor-phase epitaxy is investigated by atomic force microscopy. The surface structures are found to be similar to those previously reported for GaAs (311)B and (311)A substrates. In particular, the appearance of zero-dimensional microstructures in the GaInAs/AlInAs system on InP (311)B substrates is analogous to the self-organizing formation of buried InGaAs quantum disks in the case of GaAs (311)B substrates.
No takes yet. Share an insight, caveat, or question.
Nötzel et al. (1995) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: