Deep level transient spectroscopy and transport properties measurements were performed on close-spaced vapor transport deposited epitaxial GaAs. The deep EL2 donor level was consistently observed in all of the layers. A side band at around 300 K was found to be present in relatively high concentration close to the as-grown surface of the epitaxial films. The multilevel impurity model treatments suggest the existence of an off-stoichiometry-induced deep acceptor level, related to possible gallium vacancies, in As-rich GaAs.
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Lombos et al. (1990) studied this question.
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