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A systematic quantitative study of local-field effects in the plasmon line shape of semiconductors of the diamond (Si, Ge) and zinc-blende (GaP, GaAs, GaSb, InAs, InSb) structures is presented and is contrasted with the behavior in Al and In. Because VGωₚ1, the effects of the periodic potential on the dielectric properties can be accounted for by a perturbation expansion to second order in VGω. We find quantitative agreement with electron-energy-loss experiments when local-field corrections are included.
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K. Sturm (1978) studied this question.
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