We report on organometallic chemical vapor deposition (OMCVD)-grown AlInAs/InP field effect transistors (EET's), employing a delta-doped channel. The EET's, having a gate length of 1.0 µm, demonstrated excellent saturation characteristics and a broad plateau of transconductance around a peak value of 210 mS/mm. The transistors were also highly stable with no hysteresis or long-term drain current drift being observed.
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Jeong et al. (1992) studied this question.
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