Low-pressure metalorganic chemical vapor deposition growth and characterization of δ-doped InP

This work describes the low-pressure metalorganic chemical vapor deposition growth of planar-doped InP epilayers using Si donors. Capacitance-voltage measurements and analysis by secondary ion mass spectroscopy show that the width of such δ-doped layers is of only a few lattice planes. Transport measurements give evidence for quantum confinement of the electronic gas in the layer and thus confirm the narrow width.