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June 1, 1995IEEE Journal of Selected Topics in Quantum Electronics

98-μm InGaAs-InGaP strained quantum-well lasers with GaAs-InGaP superlattice optical confinement layer

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Authors

MUM. UsamiThe University of TokyoYMYuichi MatsushimaWaseda UniversityYTYuki TakahashiSaitama University

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Usami et al. (1995) studied this question.

synapsesocial.com/papers/6a7228eeb5c1fe5ca9dff3f0https://doi.org/10.1109/2944.401203
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