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January 6, 1992Applied Physics Letters

Low-threshold InGaAs strained-layer quantum-well lasers (λ=0.98 μm) with GaInP cladding layers and mass-transported buried heterostructure

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ZLZ. L. LiauMIT Lincoln LaboratorySPS. C. PalmateerBAE Systems (United States)SGS. H. GrovesMIT Lincoln Laboratory

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Liau et al. (1992) studied this question.

synapsesocial.com/papers/6a7c85ea65565e044576decehttps://doi.org/10.1063/1.107377
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